- 您现在的位置：买卖IC网 > Sheet目录495 > OP525DA (TT Electronics/Optek Technology)PHOTODARLINGTON NPN CLR 1210 SMD
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (1)
Collector-Emitter Voltage
OP525, OP525F
OP525DA
Emitter-Collector Voltage
Collector Current
OP525, OP525F
OP525DA
Power Dissipation (2)
OP525, OP525F
OP525DA
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40 o C to +100 o C
-40 o C to +80 o C
260° C
30 V
35 V
5V
20 mA
30 mA
75 mW
100 mW
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
I C(ON)
V CE(SAT)
On-State Collector Current
OP525F
OP525
OP525DA
Collector-Emitter Saturation Voltage
OP525, OP525F
OP525DA
2.0
1.0
10.0
-
-
-
-
-
-
-
-
-
-
0.4
1.7
mA
V
V CE = 5.0 V, E E = 0.5 mW/cm 2
V CE = 5.0 V, E E = 1.5 mW/cm 2 (3)
V CE = 5.0 V, E E = 0.15 mW/cm 2 (3)
I C = 100 μA, E E = 1.0 mW/cm 2 (3)
I C = 1 mA, E E = 0.5 mW/cm 2 (3)
Collector-Emitter Dark Current
I CEO
OP525, OP525F
OP525DA
-
-
100
200
nA
V CC = 10.0 V (4)
Collector-Emitter Breakdown Voltage
V BR(CEO)
OP525, OP525F
OP525DA
30
35
-
-
V
I C = 100 μA, E E = 0
I C = 1 mA, E E = 0
Emitter-Collector Breakdown Voltage
V BR(ECO)
OP525, OP525F
OP525DA
5
5
-
-
-
-
V
I E = 100 μA, E E = 0
I E = 100 μA, E E = 0
Rise and Fall Times
t r, t f
λ 0.5
OP525, OP525F
OP525DA
Spectral Bandwidth OP525F
-
750
15
50
-
-
-
1100
μs
nm
I C = 1 mA, R L = 1K ?
I C = 1 mA, R L = 1K ?
-
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in μA, use the formulate I CEO = 10 (0.04 t - ?) , where T A is the ambient temperature in ° C.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F
05/2012
Page 3 of 5
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
OP535C
PHOTODARLINGTON SILICON NPN T-1
OP538FC
PHOTODARL SILCN NPN FLAT SD LOOK
OP550D
PHOTOTRANS SILICON NPN SIDE LOOK
OP555D
PHOTOTRNS NPN PLASTIC SIDE LOOK
OP560C
PHOTODARLINGTON NPN 935NM SIDELK
OP565B
PHOTODARL SILICON NPN SIDE LOOK
OP573
PHOTOTRANSISTOR NPN SND REV GULL
OP580DA
PHOTODARLINGTON NPN CLR PLCC-2
相关代理商/技术参数
OP525F
功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP526,005
功能描述:MOSFET OP526/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP528,005
功能描述:MOSFET OP528/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP529,005
功能描述:MOSFET OP529/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP530
制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN SILICON PHOTODARLINGTON
OP530FC
制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic
OP530T,005
功能描述:MOSFET OP530T/UNCASED/FOIL/ RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP531/A,005
功能描述:MOSFET OP531/UNCASED/FOIL//A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube